LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

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MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. ? Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

2000 MHz, 10 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.\n? Specified Two-Tone Performance @ 2000 MHz, 26 Volts\n?? Output Power ó 10 Watts PEP\n?? Power Gain ó 10.5 dB\n?? Efficienc ? Excellent Thermal Stability\n? Characterized with Series Equivalent Large-Signal Impedance Parameters\n? RoHS Compliant\n? Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.;

恩XP

2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview The MRF282ZR1 is designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. \n?Specified Two–Tone Performance @ 2000 MHz, 26 Volts\nOutput Power = 10 Watts PEP\n\tPower Gain = 10.5 dB\n\tEfficiency = 28%\n\tIntermodulation Distortion = –31 dBc\n\n?Specified Single–Tone Performance @ 2000 MHz, 26 Volts\nOutput Power = 10 Watts CW\n\tPower Gain = 9.5 dB\n\tEfficiency = 35;

恩XP