NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF374 is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. FEATURES: ? PG = 13.5 dB typ. at 100 W/875 MHz ? ηD = 36 Typical ? Omnigold? Metalization System

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ASI

RF Power Field-Effect Transistor

Designed for broadband commercial and industrial applications with frequencies from 470 - 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 28 volt transmitter equipment. ? Typical Two-Tone Performance @ 860 MHz

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET

Overview \"MRF374\" removed from active portfolio. Possible Replacement Part: \"MRF374A\".The MRF374 is designed for broadband commercial and industrial applications with frequencies from 470 ? 860 MHz. The high gain and broadband performance of this device makes it ideal for large?signal, common so \n?Typical Two–Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture\t\t\tOutput Power — 100 Watts PEP\n\tPower Gain — 13.5 dB\n\tEfficiency — 36%\n\tIMD — ?–31 dBc\n?Typical Performance at 860 MHz, 28 Volts, Broadband Fixture\nOutput Power — 100 Watts PEP\n\tPower Gain — 12 dB\n\tEfficiency ;

恩XP

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Trans RF MOSFET N-CH 65V 7A 5-Pin Case 375F-04

NJS

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. ? Typical Two–Tone Performance @ 860

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MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field Effect Transistors

文件：370.47 Kbytes 頁數(shù)：12 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體