The RF Line Controlled ????Broadband Power Transistor 100W, 30 to 500MHz, 28V

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. ? Specified 28 V, 500 MHz characteristics — Output power = 100 W Typical gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55 (typ.) ? Built–in input impedance

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BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. ? Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class A

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MOTOROLA

摩托羅拉

The RF Line NPN Silicon Push-Pull RF Power Transistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. ? Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

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MACOM

NPN Silicon Push-Pull RF Power TVansistor

The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. ? Specified 28 Volt, 500 MHz Characteristics — Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

The RF Line Controlled ????Broadband Power Transistor

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MA-COM

100 W, 30 to 500 MHz CONTROLLED “Q” BROADBAND PUSH–PULL RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Push-Pull RF Power Transistor. . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.? Specified 28 Volt, 500 MHz Characteristics —\n?? Output Power = 100 W\n?? Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class

恩XP

Bipolar

Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. ·Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.)\n·Gold Metallization System for High Reliability\n·Push–Pull Configuration Reduces Even Numbered Harmonics\n·Built–In Input Impedance Matching Networks for ;

MACOM

Trans GP BJT NPN 30V 16A 8-Pin Case 744A-01

NJS

Package：744A-01；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS 2NPN EMITTR 30V 744A-01

MACOM Technology Solutions

The RF Line Controlled Broadband Power Transistor

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