NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF321 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. FEATURES: ? Class C Operation ? PG = 10 dB at 10 W/400 MHz ? Omnigold? Metalization System

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ASI

The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V

The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. ● Guaranteed performance at 400 MHz, 28 Vdc Output power = 10 W Power gain = 12 dB min. Efficiency = 50 min. ●

文件：224.46 Kbytes 頁數(shù)：5 Pages

MA-COM

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. ? Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min ? 100

文件：114.98 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. ? Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min ? 100

文件：184.17 Kbytes 頁數(shù)：5 Pages

MACOM

NPN Silicon RF Power Transistor

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. ? Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min ? 100

文件：93.77 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

NPN Silicon RF power transistor

Description: MRF321 is designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min

文件：45.67 Kbytes 頁數(shù)：2 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V

文件：224.46 Kbytes 頁數(shù)：5 Pages

MA-COM

Bipolar

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. ·Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min.\n·100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc\n·Computer–controlled wirebonding gives consistent input Impedance\n·Gold Metallization System for High R;

MACOM

RF POWER TRANSISTOR NPN SILICON

恩XP

Trans GP BJT NPN 33V 1.5A 4-Pin Case 244-04

NJS