LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

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MOTOROLA

摩托羅拉

RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. ? Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

10 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs

The RF Sub–Micron MOSFET Line\nRF Power Field Effect Transistors\nN–Channel Enhancement–Mode Lateral MOSFETs\n\nDesigned for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.? Specified Two–

恩XP

2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview MRF282SR1 removed from active portfolio. View replacement parts via Part Number Search. \n?Specified Two-Tone Performance @ 2000 MHz, 26 Volts\nOutput Power = 10 Watts PEP\n\tPower Gain = 10.5 dB\n\tEfficiency = 28%\n\tIntermodulation Distortion = –31 dBc\n\n?Specified Single-Tone Performance @ 2000 MHz, 26 Volts\nOutput Power = 10 Watts CW\n\tPower Gain = 9.5 dB\n\tEfficiency = 35;

恩XP