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首頁(yè) >M5M5>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
M5M51008VP-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008VP-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008VP-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008VP-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51016BRT-10VL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51016BRT-10VLL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51016BTP-10L-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51016BTP-10LL-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51016BTP-10VL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51016BTP-10VLL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI

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技術(shù)參數(shù)

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
上海市鑫鴻達(dá)電子	M5M5256DFP-70GI	RENESAS/瑞薩	2022+		150	全新原裝貨期兩周	詢價(jià)
深圳市弘為電子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市卓越微芯電子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市中億偉業(yè)電子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原裝假一賠十	詢價(jià)
深圳市鵬和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市科雨電子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市河鋒鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞薩	2022+	TSOP32	99	原廠代理終端免費(fèi)提供樣品	詢價(jià)
深圳市歐亞佳電子有限公司	M5M5165P-15	MITSUBISHI	20+	DIP28	11520	特價(jià)全新原裝公司現(xiàn)貨	詢價(jià)
深圳市英科美電子有限公司	M5M5V108DKV-70H	RENESAS/瑞薩	2223+	TSSOP32	26800	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原裝現(xiàn)貨,可開(kāi)13%稅票	詢價(jià)

更多M5M5供應(yīng)商更新時(shí)間2026-1-22 9:50:00

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