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    M5M51008CFP-55H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CFP-55X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CFP-70H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CFP-70X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-55
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-55H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-55X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-70
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-70H
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    M5M51008CKR-70X
    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
    
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
    文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
    MITSUBISHI
    三菱電機(jī)
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號(hào)：
      M5M
    • 制造商：
      MITSUBISHI 
    • 制造商全稱：
      Mitsubishi Electric Semiconductor 
    • 功能描述：
      2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 
    
            
    
        
    
            
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