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          M5M51008CRV
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CRV-55H
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CRV-55X
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CRV-70H
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CRV-70X
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CVP
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CVP-55H
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CVP-55X
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CVP-70H
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          M5M51008CVP-70X
          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
          
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de
          文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages
          MITSUBISHI
          三菱電機(jī)
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            M5M
          • 制造商：
            MITSUBISHI 
          • 制造商全稱：
            Mitsubishi Electric Semiconductor 
          • 功能描述：
            2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 
          
            
          
        
          
            
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          M5L
          		

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          29
          		

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          MITSUBI
          		

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          CDIP鏡
          		

          8560
          		

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