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          首頁 >M5M>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          M5M51008DFP

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:70.54 Kbytes 頁數(shù):8 Pages

          MITSUBISHI

          三菱電機

          M5M51008DFP

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:120.04 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          M5M51008DFP-55H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:120.04 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          M5M51008DFP-55H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:70.54 Kbytes 頁數(shù):8 Pages

          MITSUBISHI

          三菱電機

          M5M51008DFP-70H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:70.54 Kbytes 頁數(shù):8 Pages

          MITSUBISHI

          三菱電機

          M5M51008DFP-70H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:120.04 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          M5M51008DKR

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:120.04 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          M5M51008DKR-55H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:120.04 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          M5M51008DKR-55H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:70.54 Kbytes 頁數(shù):8 Pages

          MITSUBISHI

          三菱電機

          M5M51008DKR-70H

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

          文件:120.04 Kbytes 頁數(shù):9 Pages

          RENESAS

          瑞薩

          詳細參數(shù)

          • 型號:

            M5M

          • 制造商:

            MITSUBISHI

          • 制造商全稱:

            Mitsubishi Electric Semiconductor

          • 功能描述:

            2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

          供應商型號品牌批號封裝庫存備注價格
          MIT
          25+
          SOP-14
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          MIT
          25+
          CDIP40
          3629
          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          詢價
          MIT
          1824+
          DIP40
          3108
          原裝現(xiàn)貨專業(yè)代理,可以代拷程序
          詢價
          MIT
          23+
          DIP
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          M5L
          25+
          QFP
          3200
          全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
          詢價
          MIT
          06+
          原廠原裝
          4283
          只做全新原裝真實現(xiàn)貨供應
          詢價
          MIT
          24+/25+
          29
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          M5L
          24+
          DIP
          5000
          只做原裝公司現(xiàn)貨
          詢價
          MITSUBISHI
          1
          全新原裝 貨期兩周
          詢價
          MITSUBI
          23+
          CDIP鏡
          8560
          受權代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          更多M5M供應商 更新時間2026-1-21 17:52:00
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