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          首頁 >M5M>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          M5M4V64S30ATP-8A

          64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

          DESCRIPTION The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in compute

          文件:1.08233 Mbytes 頁數(shù):51 Pages

          MITSUBISHI

          三菱電機

          M5M4V64S30ATP-8L

          64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

          DESCRIPTION The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in compute

          文件:1.08233 Mbytes 頁數(shù):51 Pages

          MITSUBISHI

          三菱電機

          M5M5

          SILICON GENERAL PURPOSE 5.0 AMP DIODES

          [EDAL]

          文件:1.46454 Mbytes 頁數(shù):2 Pages

          EDAL

          M5M5

          MEDIUM CURRENT SILICON RECTIFIERS

          [EDAL]

          文件:179.31 Kbytes 頁數(shù):2 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          M5M51008BFP

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

          文件:68.53 Kbytes 頁數(shù):7 Pages

          MITSUBISHI

          三菱電機

          M5M51008BFP-10VL

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

          文件:68.53 Kbytes 頁數(shù):7 Pages

          MITSUBISHI

          三菱電機

          M5M51008BFP-10VLL

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

          文件:68.53 Kbytes 頁數(shù):7 Pages

          MITSUBISHI

          三菱電機

          M5M51008BFP-12VL

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

          文件:68.53 Kbytes 頁數(shù):7 Pages

          MITSUBISHI

          三菱電機

          M5M51008BFP-12VLL

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

          文件:68.53 Kbytes 頁數(shù):7 Pages

          MITSUBISHI

          三菱電機

          M5M51008BFP-15VL

          1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

          DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T

          文件:68.53 Kbytes 頁數(shù):7 Pages

          MITSUBISHI

          三菱電機

          詳細(xì)參數(shù)

          • 型號:

            M5M

          • 制造商:

            MITSUBISHI

          • 制造商全稱:

            Mitsubishi Electric Semiconductor

          • 功能描述:

            2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

          供應(yīng)商型號品牌批號封裝庫存備注價格
          MIT
          25+
          SOP-14
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價
          MIT
          25+
          CDIP40
          3629
          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          詢價
          MIT
          1824+
          DIP40
          3108
          原裝現(xiàn)貨專業(yè)代理,可以代拷程序
          詢價
          MIT
          23+
          DIP
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          M5L
          25+
          QFP
          3200
          全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
          詢價
          MIT
          06+
          原廠原裝
          4283
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          MIT
          24+/25+
          29
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          M5L
          24+
          DIP
          5000
          只做原裝公司現(xiàn)貨
          詢價
          MITSUBISHI
          1
          全新原裝 貨期兩周
          詢價
          MITSUBI
          23+
          CDIP鏡
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          更多M5M供應(yīng)商 更新時間2026-1-21 17:52:00
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