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首頁(yè) >M5M>規(guī)格書(shū)列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
M5M51008BVP-12VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008BVP-15VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008BVP-15VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008BVP-70VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008BVP-70VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008CCP-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008CCP-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008CCP-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008CCP-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI
M5M51008CFP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 頁(yè)數(shù)：7 Pages	MITSUBISHI 三菱電機(jī)	MITSUBISHI

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詳細(xì)參數(shù)

型號(hào)：
M5M
制造商：
MITSUBISHI
制造商全稱：
Mitsubishi Electric Semiconductor
功能描述：
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
諦輝(北京/上海/青島 )電子科技有限公司	M5M27C202K	MIT	25+	SOP-14	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
深圳市佳鑫美電子科技有限公司	M5M27C202K	MIT	25+	CDIP40	3629	原裝優(yōu)勢(shì)!房間現(xiàn)貨!歡迎來(lái)電!	詢價(jià)
深圳市昊創(chuàng)電子有限公司	M5M27C202K	MIT	1824+	DIP40	3108	原裝現(xiàn)貨專業(yè)代理,可以代拷程序	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	M5M27C202K	MIT	23+	DIP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市恒達(dá)億科技有限公司	M5M27C202K	M5L	25+	QFP	3200	全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售!	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	M5M27C202K10	MIT	06+	原廠原裝	4283	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市聯(lián)世界科技有限公司	M5M27C202K-10	MIT	24+/25+		29	原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)	詢價(jià)
深圳市鵬和科技有限公司	M5M27C202K-10	M5L	24+	DIP	5000	只做原裝公司現(xiàn)貨	詢價(jià)
上海金慶電子技術(shù)有限公司	M5M27C202K-10	MITSUBISHI	新		1	全新原裝貨期兩周	詢價(jià)
深圳市華來(lái)深電子有限公司	M5M27C202K-10	MITSUBI	23+	CDIP鏡	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)

更多M5M供應(yīng)商更新時(shí)間2026-1-21 17:52:00

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