絲?。?strong>K10A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

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SY

順燁電子

絲?。?a target="_blank" title="Marking" href="/k10a50d/marking.html">K10A50D；Package：SC-67；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ? Low drain-source ON-resistance: RDS (ON)= 0.62 ?(typ.) ? High forward transfer admittance: ?Yfs?= 5.0 S (typ.) ? Low leakage current: IDSS= 10 μA (max) (VDS= 500

文件：205.01 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k10a50w/marking.html">K10A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

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TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k10a60d/marking.html">K10A60D；Switching Regulator Applications

? Low drain-source ON-resistance: RDS (ON)= 0.58 ?(typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) ? Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k10a60w5/marking.html">K10A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 85 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：242.38 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/k10a80w/marking.html">K10A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45mA)

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TOSHIBA

東芝

絲印：K10A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS (?-MOS??

文件：225.26 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ? Low drain-source ON-resistance: RDS (ON)= 0.62 ?(typ.) ? High forward transfer admittance: ?Yfs?= 5.0 S (typ.) ? Low leakage current: IDSS= 10 μA (max) (VDS= 500

文件：205.01 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Switching Regulator Applications

? Low drain-source ON-resistance: RDS (ON)= 0.58 ?(typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) ? Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：164.35 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 ? (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) Applications ? Switching Voltage Regulators

文件：246.69 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝