絲?。?a target="_blank" title="Marking" href="/k10a60d/marking.html">K10A60D；Switching Regulator Applications

? Low drain-source ON-resistance: RDS (ON)= 0.58 ?(typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) ? Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：164.35 Kbytes 頁數(shù)：6 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=550V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.05Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.23 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 馬來西亞 Drain current ID 10 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID 10 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V ;

Toshiba

東芝