TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ? Low drain-source ON-resistance: RDS (ON)= 0.62 ?(typ.) ? High forward transfer admittance: ?Yfs?= 5.0 S (typ.) ? Low leakage current: IDSS= 10 μA (max) (VDS= 500

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TOSHIBA

東芝

絲?。?strong>K10A50D；Package：SC-67；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ? Low drain-source ON-resistance: RDS (ON)= 0.62 ?(typ.) ? High forward transfer admittance: ?Yfs?= 5.0 S (typ.) ? Low leakage current: IDSS= 10 μA (max) (VDS= 500

文件：205.01 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

統(tǒng)懋

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 30 - 60 Volts CURRENT 10 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop * Guardring for o

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CHENMKO

力勤

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en ? Low drain-source ON-resistance: RDS (ON)= 0.62 ?(typ.) ? High forward transfer admittance: ?Yfs?= 5.0 S (typ.) ? Low leakage current: IDSS= 10 μA (max) (VDS= 500

文件：205.01 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝