絲?。?strong>K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.75 Kbytes 頁數(shù)：3 Pages

SY

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絲?。?strong>K12；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導體

絲印：K12；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications

文件：459.51 Kbytes 頁數(shù)：7 Pages

DIODES

美臺半導體

絲?。?strong>K12；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導體

絲?。?strong>K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：477.13 Kbytes 頁數(shù)：3 Pages

SY

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絲?。?strong>K12；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

文件：542.86 Kbytes 頁數(shù)：3 Pages

SY

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絲?。?strong>K12；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.43 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風微

絲?。?strong>K12；Package：SOT-23；N-Enhancement Field Effect Transistor

文件：2.93609 Mbytes 頁數(shù)：8 Pages

PJSEMI

平晶半導體

絲?。?strong>K12；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：1.1341 Mbytes 頁數(shù)：5 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

絲印：K12A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 頁數(shù)：7 Pages

SY

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