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    首頁 >IS41>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IS41LV16400-50TI

    4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor

    文件:143.62 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV16400-60T

    4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor

    文件:143.62 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV16400-60TE

    4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor

    文件:143.62 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV16400-60TI

    4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit wor

    文件:143.62 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV1665

    64K x16 bit Dynamic RAM with Fast Page Mode

    DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes

    文件:388.59 Kbytes 頁數(shù):19 Pages

    ICSI

    IS41LV1665-40K

    64K x16 bit Dynamic RAM with Fast Page Mode

    DESCRIPTION The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16- bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes

    文件:388.59 Kbytes 頁數(shù):19 Pages

    ICSI

    IS41LV32256

    256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz

    DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram

    文件:157.63 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV32256-28PQ

    256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz

    DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram

    文件:157.63 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV32256-28TQ

    256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz

    DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram

    文件:157.63 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    IS41LV32256-30PQ

    256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz

    DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram

    文件:157.63 Kbytes 頁數(shù):19 Pages

    ISSI

    矽成半導體

    詳細參數(shù)

    • 型號:

      IS41

    • 制造商:

      ICSI

    • 制造商全稱:

      Integrated Circuit Solution Inc

    • 功能描述:

      256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應商型號品牌批號封裝庫存備注價格
    ISSI
    2015+
    DIP/SMD
    19889
    一級代理原裝現(xiàn)貨,特價熱賣!
    詢價
    ISSI
    2023+
    TSOP
    50000
    原裝現(xiàn)貨
    詢價
    ISSI
    23+
    TSOP
    4710
    一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價
    ISSI
    25+
    SOJ40
    3850
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    ISSI Integrated Silicon Soluti
    22+
    40TSOP
    9000
    原廠渠道,現(xiàn)貨配單
    詢價
    ISSI
    三年內(nèi)
    1983
    只做原裝正品
    詢價
    ISSI/矽成
    1240
    DRAM/256KX16EDO/TSOP2(40
    1692
    原裝香港現(xiàn)貨真實庫存。低價
    詢價
    ISSI, Integrated Silicon Solut
    24+
    40-TSOP
    56200
    一級代理/放心采購
    詢價
    ISSI
    1931+
    N/A
    493
    加我qq或微信,了解更多詳細信息,體驗一站式購物
    詢價
    ISSI
    25+
    40-TSOP
    1001
    就找我吧!--邀您體驗愉快問購元件!
    詢價
    更多IS41供應商 更新時間2026-1-21 16:40:00

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