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首頁 >IS41>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IS41LV32256-30TQ	文件：157.63 Kbytes Page：19 Pages	256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram 文件：157.63 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV32256-35PQ	文件：157.63 Kbytes Page：19 Pages	256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram 文件：157.63 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV32256-35TQ	文件：157.63 Kbytes Page：19 Pages	256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz DESCRIPTION The ISSI IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals facilitate execution of Byte Read and Byte Write operations. A very fast EDO cycle time of 10 ns allows an operating frequency of 100 MHz and makes the IS41LV32256 an ideal fram 文件：157.63 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV44002	文件：158.88 Kbytes Page：19 Pages	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b 文件：158.88 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV44002	文件：236.69 Kbytes Page：20 Pages	4Mx4 bit Dynamic RAM with EDO Page Mode DESCRIPTION The ICSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b 文件：236.69 Kbytes 頁數(shù)：20 Pages	ICSI	ICSI
IS41LV44002-50J	文件：158.88 Kbytes Page：19 Pages	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b 文件：158.88 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV44002-50JI	文件：158.88 Kbytes Page：19 Pages	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b 文件：158.88 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV44002-60J	文件：158.88 Kbytes Page：19 Pages	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b 文件：158.88 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV44002-60JI	文件：158.88 Kbytes Page：19 Pages	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-b 文件：158.88 Kbytes 頁數(shù)：19 Pages	ISSI 矽成半導體	ISSI
IS41LV44002A	文件：297.58 Kbytes Page：20 Pages	4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI 44002 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word 文件：297.58 Kbytes 頁數(shù)：20 Pages	ICSI	ICSI

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詳細參數(shù)

型號：
IS41
制造商：
ICSI
制造商全稱：
Integrated Circuit Solution Inc
功能描述：
256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市福田區(qū)綠盛電子商行	IS41C16256-60T	ISSI	2015+	DIP/SMD	19889	一級代理原裝現(xiàn)貨,特價熱賣!	詢價
深圳市宏捷佳電子科技有限公司	IS41C16256-60T	ISSI	2023+	TSOP	50000	原裝現(xiàn)貨	詢價
貿澤芯城（深圳）電子科技有限公司	IS41C16256-60TI	ISSI	23+	TSOP	4710	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價
深圳市卓越微芯電子有限公司	IS41C16256C-35KLI	ISSI	25+	SOJ40	3850	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市河鋒鑫科技有限公司	IS41C16256C35TLI	ISSI Integrated Silicon Soluti	22+	40TSOP	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市納立科技有限公司	IS41C16256C-35TLI	ISSI	三年內		1983	只做原裝正品	詢價
深圳市昊創(chuàng)電子有限公司	IS41C16256C-35TLI	ISSI/矽成	1240	DRAM/256KX16EDO/TSOP2(40	1692	原裝香港現(xiàn)貨真實庫存。低價	詢價
瀚佳科技(深圳)有限公司	IS41C16256C-35TLI	ISSI, Integrated Silicon Solut	24+	40-TSOP	56200	一級代理/放心采購	詢價
深圳市艾宇欣科技有限公司	IS41C16256C-35TLI	ISSI	1931+	N/A	493	加我qq或微信，了解更多詳細信息,體驗一站式購物	詢價
深圳市科雨電子有限公司	IS41C16256C-35TLI	ISSI	25+	40-TSOP	1001	就找我吧!--邀您體驗愉快問購元件!	詢價

更多IS41供應商更新時間2026-1-21 16:40:00

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