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    首頁(yè) >IS41>規(guī)格書列表

    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    IS41LV16105B-50TLE

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-50TLI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60K

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60KE

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60KI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60KL

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60KLE

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60KLI

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60T

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16105B-60TE

    1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV

    文件:131.5 Kbytes 頁(yè)數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    詳細(xì)參數(shù)

    • 型號(hào):

      IS41

    • 制造商:

      ICSI

    • 制造商全稱:

      Integrated Circuit Solution Inc

    • 功能描述:

      256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
    ISSI
    2015+
    DIP/SMD
    19889
    一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
    詢價(jià)
    ISSI
    2023+
    TSOP
    50000
    原裝現(xiàn)貨
    詢價(jià)
    ISSI
    23+
    TSOP
    4710
    一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價(jià)
    ISSI
    25+
    SOJ40
    3850
    百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
    詢價(jià)
    ISSI Integrated Silicon Soluti
    22+
    40TSOP
    9000
    原廠渠道,現(xiàn)貨配單
    詢價(jià)
    ISSI
    三年內(nèi)
    1983
    只做原裝正品
    詢價(jià)
    ISSI/矽成
    1240
    DRAM/256KX16EDO/TSOP2(40
    1692
    原裝香港現(xiàn)貨真實(shí)庫(kù)存。低價(jià)
    詢價(jià)
    ISSI, Integrated Silicon Solut
    24+
    40-TSOP
    56200
    一級(jí)代理/放心采購(gòu)
    詢價(jià)
    ISSI
    1931+
    N/A
    493
    加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
    詢價(jià)
    ISSI
    25+
    40-TSOP
    1001
    就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
    詢價(jià)
    更多IS41供應(yīng)商 更新時(shí)間2026-1-22 9:01:00

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