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          首頁 >IS41>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IS410

          Lead-free Epoxy Laminate and Prepreg

          PRODUCT FEATURES Industry Recognition UL File Number: E41625 RoHS Compliant Performance Attributes Lead-free assembly compatible 6x 288°C solder float capable Processing Advantages FR-4 process compatible

          文件:82.74 Kbytes 頁數(shù):3 Pages

          ISOLA

          IS41C16100

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-50K

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-50KI

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-50T

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-50TI

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-60K

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-60KI

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-60T

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          IS41C16100-60TI

          1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20

          文件:123.63 Kbytes 頁數(shù):20 Pages

          ISSI

          矽成半導體

          詳細參數(shù)

          • 型號:

            IS41

          • 制造商:

            ICSI

          • 制造商全稱:

            Integrated Circuit Solution Inc

          • 功能描述:

            256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

          供應商型號品牌批號封裝庫存備注價格
          ISSI
          2015+
          DIP/SMD
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          ISSI
          2023+
          TSOP
          50000
          原裝現(xiàn)貨
          詢價
          ISSI
          23+
          TSOP
          4710
          一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
          詢價
          ISSI
          25+
          SOJ40
          3850
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          ISSI Integrated Silicon Soluti
          22+
          40TSOP
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          ISSI
          三年內(nèi)
          1983
          只做原裝正品
          詢價
          ISSI/矽成
          1240
          DRAM/256KX16EDO/TSOP2(40
          1692
          原裝香港現(xiàn)貨真實庫存。低價
          詢價
          ISSI, Integrated Silicon Solut
          24+
          40-TSOP
          56200
          一級代理/放心采購
          詢價
          ISSI
          1931+
          N/A
          493
          加我qq或微信,了解更多詳細信息,體驗一站式購物
          詢價
          ISSI
          25+
          40-TSOP
          1001
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          更多IS41供應商 更新時間2026-1-20 17:03:00
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