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    首頁 >IS41>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IS41LV16256B-35T

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

    文件:145.87 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16256B-35TL

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

    文件:145.87 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16256B-60K

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

    文件:145.87 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16256B-60KL

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

    文件:145.87 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16256B-60T

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

    文件:145.87 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16256B-60TL

    256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    DESCRIPTION The ISSI IS41LV16256B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Writ

    文件:145.87 Kbytes 頁數(shù):22 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16257-60K

    256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ICSI IC41C16257 and the IC41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, mak

    文件:760.51 Kbytes 頁數(shù):20 Pages

    ICSI

    IS41LV16257B

    256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

    文件:129.47 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16257B-35K

    256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

    文件:129.47 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    IS41LV16257B-35KL

    256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

    DESCRIPTION The ISSI IS41LV16257B is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices

    文件:129.47 Kbytes 頁數(shù):20 Pages

    ISSI

    矽成半導(dǎo)體

    詳細參數(shù)

    • 型號:

      IS41

    • 制造商:

      ICSI

    • 制造商全稱:

      Integrated Circuit Solution Inc

    • 功能描述:

      256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

    供應(yīng)商型號品牌批號封裝庫存備注價格
    ISSI
    2015+
    DIP/SMD
    19889
    一級代理原裝現(xiàn)貨,特價熱賣!
    詢價
    ISSI
    2023+
    TSOP
    50000
    原裝現(xiàn)貨
    詢價
    ISSI
    23+
    TSOP
    4710
    一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
    詢價
    ISSI
    25+
    SOJ40
    3850
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    ISSI Integrated Silicon Soluti
    22+
    40TSOP
    9000
    原廠渠道,現(xiàn)貨配單
    詢價
    ISSI
    三年內(nèi)
    1983
    只做原裝正品
    詢價
    ISSI/矽成
    1240
    DRAM/256KX16EDO/TSOP2(40
    1692
    原裝香港現(xiàn)貨真實庫存。低價
    詢價
    ISSI, Integrated Silicon Solut
    24+
    40-TSOP
    56200
    一級代理/放心采購
    詢價
    ISSI
    1931+
    N/A
    493
    加我qq或微信,了解更多詳細信息,體驗一站式購物
    詢價
    ISSI
    25+
    40-TSOP
    1001
    就找我吧!--邀您體驗愉快問購元件!
    詢價
    更多IS41供應(yīng)商 更新時間2026-1-22 9:01:00

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