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          首頁 >IRL640>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL640

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissip

          文件:1.65092 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL640

          HEXFET Power MOSFET

          文件:247.41 Kbytes 頁數(shù):8 Pages

          IRF

          IRL640

          Power MOSFET

          文件:1.02455 Mbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL640

          HEXFET Power Mosfet

          文件:412.4 Kbytes 頁數(shù):5 Pages

          ARTSCHIP

          IRL640

          Power MOSFET

          ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Logic-level gate drive;

          Vishay

          威世

          IRL640

          HEXFET Power MOSFET

          Infineon

          英飛凌

          IRL640_V01

          Power MOSFET

          FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? 150 °C operating temperature ? Fast switching ? Ease of paralleling ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

          文件:895.86 Kbytes 頁數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRL640A

          Advanced Power MOSFET

          BVDSS = 200 V RDS(on) = 0.18? ID = 18 A FEATURES ? Logic-Level Gate Drive ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 20

          文件:226.35 Kbytes 頁數(shù):7 Pages

          FAIRCHILD

          仙童半導體

          IRL640PBF

          HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.18廓 , ID = 17A )

          文件:930.01 Kbytes 頁數(shù):8 Pages

          IRF

          IRL640S

          HEXFET-R POWER MOSFET

          文件:271.5 Kbytes 頁數(shù):8 Pages

          IRF

          技術參數(shù)

          • Pb-free:

            Pb

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            200

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            2

          • ID Max (A):

            18

          • PD Max (W):

            110

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            180

          • Qg Typ @ VGS = 10 V (nC):

            40

          • Ciss Typ (pF):

            1310

          • Package Type:

            TO-220-3

          供應商型號品牌批號封裝庫存備注價格
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          2015+
          TO-220AB
          19889
          一級代理原裝現(xiàn)貨,特價熱賣!
          詢價
          IR
          24+
          TO-220AB
          8866
          詢價
          IR
          1415+
          TO-263
          28500
          全新原裝正品,優(yōu)勢熱賣
          詢價
          ir
          06+
          TO-220
          11800
          自己公司全新庫存絕對有貨
          詢價
          VISHAY/IR
          24+
          原廠封裝
          1250
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          23+
          TO-220
          5000
          原裝正品,假一罰十
          詢價
          IR
          24+
          12
          原裝現(xiàn)貨,可開13%稅票
          詢價
          VISHAY
          25+
          TO-220
          3000
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          IR
          23+
          263
          3000
          原裝正品假一罰百!可開增票!
          詢價
          更多IRL640供應商 更新時間2026-1-19 14:16:00
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