| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFIBC30 | Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：169.15 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：169.15 Kbytes 頁數(shù)：6 Pages | IRF | IRF | ||
iscN-Channel MOSFET Transistor ? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) =2.2? (MAX) ? Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：319.36 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Isolated Package ? High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) ? Sink 文件：1.31819 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Isolated Package ? High Voltage Isolation = 2.5 kVRMS(t = 60 s;f = 60 Hz) ? Sink 文件：1.31819 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applicat 文件：288.34 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
Power MOSFET 文件：929.66 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：278.61 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：278.61 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：278.61 Kbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號(hào)：
IRFIBC30
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
15+ |
TO-220F |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
17+ |
TO-220F |
6200 |
詢價(jià) | |||
IR |
23+ |
TO-220F |
10000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
2447 |
TO-220F |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
IR |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VB |
25+ |
TO-220F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
IR |
26+ |
TO-220 |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) | ||
IR |
2023+ |
TO220 |
6895 |
原廠全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨 |
詢價(jià) |
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