| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRFBE30L | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of P 文件：1.20346 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBE30L | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R 文件：517.21 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRFBE30L | HEXFET? Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa 文件：473.61 Kbytes 頁數(shù)：6 Pages | IRF | IRF | |
IRFBE30L | Power MOSFET 文件：511.66 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datasheet provides information about parts that are? R 文件：517.21 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. O Dynamic dv/dt Rating O Repetitive Avalanche Rated O Fast Switching O Ease of Pa 文件：588.09 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Ease of P 文件：1.20346 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET 文件：511.66 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
IRFBE30L | Power MOSFET Dynamic dV/dt rating\nRepetitive avalanche rated\nFast switching; | Vishay 威世 | Vishay | |
IRFBE30L | HEXFET? Power MOSFET | Infineon 英飛凌 | Infineon |
詳細(xì)參數(shù)
- 型號(hào)：
IRFBE30L
- 功能描述：
MOSFET N-Chan 800V 4.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
06+ |
原廠原裝 |
1001 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
IR |
2015+ |
TO-262 |
12500 |
全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
TO-262 |
8866 |
詢價(jià) | |||
VISHAY/威世 |
23+ |
SOT-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY |
25+ |
TO-262 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
VISHAY/威世 |
23+ |
SOT-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
25+ |
SOT-262 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
VISHAY |
08+ |
SOT-262 |
989 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
TO-262-3,長(zhǎng)引線,I2Pak,TO-26 |
38550 |
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷 |
詢價(jià) |
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