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    首頁 >IRF9510>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    IRF9510

    3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

    This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching r

    文件:59.48 Kbytes 頁數(shù):7 Pages

    INTERSIL

    IRF9510

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

    文件:1.71879 Mbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRF9510

    Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)

    文件:171.75 Kbytes 頁數(shù):6 Pages

    IRF

    IRF9510

    isc P-Channel MOSFET Transistor

    FEATURES · Drain Current -ID= -4A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

    文件:371.08 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRF9510

    Power MOSFET

    DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

    文件:4.11368 Mbytes 頁數(shù):7 Pages

    KERSEMI

    IRF9510

    isc N-Channel MOSFET Transistor

    文件:279.8 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    IRF9510

    Power MOSFET

    文件:278.11 Kbytes 頁數(shù):9 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRF9510

    Power MOSFET

    文件:158.3 Kbytes 頁數(shù):8 Pages

    VISHAYVishay Siliconix

    威世威世科技公司

    IRF9510

    3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET

    This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching reg ? 3.0A, 100V\n? rDS(ON) = 1.200?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance;

    Renesas

    瑞薩

    IRF9510

    Power MOSFET

    ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? P-channel;

    Vishay

    威世

    詳細參數(shù)

    • 型號:

      IRF9510

    • 功能描述:

      MOSFET P-Chan 100V 4.0 Amp

    • RoHS:

    • 制造商:

      STMicroelectronics

    • 晶體管極性:

      N-Channel

    • 汲極/源極擊穿電壓:

      650 V

    • 閘/源擊穿電壓:

      25 V

    • 漏極連續(xù)電流:

      130 A 電阻汲極/源極

    • RDS(導(dǎo)通):

      0.014 Ohms

    • 配置:

      Single

    • 安裝風(fēng)格:

      Through Hole

    • 封裝/箱體:

      Max247

    • 封裝:

      Tube

    供應(yīng)商型號品牌批號封裝庫存備注價格
    IR
    24+
    TO-220
    15000
    全新原裝的現(xiàn)貨
    詢價
    IR
    2015+
    TO-220
    19889
    一級代理原裝現(xiàn)貨,特價熱賣!
    詢價
    IR
    24+/25+
    15
    原裝正品現(xiàn)貨庫存價優(yōu)
    詢價
    HARRIS
    24+
    TO-220
    2
    詢價
    IR
    12+
    TO-263
    15000
    全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
    詢價
    IR
    05+
    原廠原裝
    4705
    只做全新原裝真實現(xiàn)貨供應(yīng)
    詢價
    VISHAY/IR
    24+
    原廠封裝
    26050
    原裝現(xiàn)貨假一罰十
    詢價
    IR
    23+
    SOP8
    5000
    原裝正品,假一罰十
    詢價
    IR
    25+
    TO220
    60
    百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
    詢價
    IR
    17+
    TO-220
    6200
    100%原裝正品現(xiàn)貨
    詢價
    更多IRF9510供應(yīng)商 更新時間2025-8-28 16:26:00

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