P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability

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SAMSUNG

三星

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

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INTERSIL

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFETS

FEATURES ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? P-Channel ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts

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VISHAYVishay Siliconix

威世威世科技公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

無錫固電

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

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KERSEMI

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

Features ? 6.5A, 200V ? r DS(ON) = 0.800 Ω ? Single Pulse Avalanche Energy Rated ? SOA is Power Dissipation Limited ? Nanosecond Switching Speeds ? Linear Transfer Characteristics ? High Input Impedance ? Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to

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SYC

SEMICONDUCTORS

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ETCList of Unclassifed Manufacturers

未分類制造商

Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

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IRF