P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved inductive ruggedness ? Fsat switching times ? Rugged polysilicon gate cell structure ? Low input capacitance ? Extended safe operating area ? Improved high temperature reliability

文件：508.31 Kbytes 頁數(shù)：12 Pages

SAMSUNG

三星

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：63.94 Kbytes 頁數(shù)：7 Pages

INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.92898 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts

文件：158.01 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

VDSS = -200V RDS(on) = 0.50 Ohm ID = -11A

文件：170.94 Kbytes 頁數(shù)：6 Pages

IRF

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -11A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.01 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved Inductive ruggedness ? Fast switching times ? Rugged polysllicon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability

文件：158.98 Kbytes 頁數(shù)：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

P-CHANNEL POWER MOSFETS

FEATURES ? Low RDS(on) ? Improved Inductive ruggedness ? Fast switching times ? Rugged polysllicon gate cell structure ? Low Input capacitance ? Extended safe operating area ? Improved high temperature reliability

文件：158.98 Kbytes 頁數(shù)：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

Features ? 11A, 200V ? r DS(ON) = 0.500 Ω ? Single Pulse Avalanche Energy Rated ? SOA is Power Dissipation Limited ? Nanosecond Switching Speeds ? Linear Transfer Characteristics ? High Input Impedance ? Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to

文件：151 Kbytes 頁數(shù)：6 Pages

SYC

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商