HEXFET? Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：206.63 Kbytes 頁(yè)數(shù)：7 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：212.12 Kbytes 頁(yè)數(shù)：7 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：212.12 Kbytes 頁(yè)數(shù)：7 Pages

IRF

Door actuator driver

文件：541.52 Kbytes 頁(yè)數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

for car body applications

Description The L5958 includes 6 linear voltage regulators and a 2 A power switch, working down to 4.5 V battery level. All the voltage regulators can be switched off through the three enable pins. Features ■ L5958 six outputs: – 8.5 V @ 200 mA – 5.0 V @ 300 mA – 3.3 V @ 250 mA

文件：1.8271 Mbytes 頁(yè)數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Door actuator driver

Features ■ One full bridge for 6A load (Ron=150mΩ) ■ Three half bridges for 1.5A load (Ron=800mΩ) ■ One highside driver for 6A load (Ron=100mΩ) ■ Two highside drivers for 1.5A load (Ron=800mΩ) ■ Programmable softstart function to drive loads with higher inrush currents (i.e. current >6A, >1

文件：395.51 Kbytes 頁(yè)數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體