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          首頁 >IRF734>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF734

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

          文件:2.10487 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRF734

          Power MOSFET

          Vishay

          威世

          IRF734

          Trans MOSFET N-CH 450V 4.9A 3-Pin(3+Tab) TO-220AB

          NJS

          NJS

          IRF7341

          MOSFET

          Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

          文件:340.07 Kbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRF7341

          絲?。?a target="_blank" title="Marking" href="/irf7341/marking.html">IRF7341;Package:SOP-8;Generation V Technology

          The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

          文件:379.66 Kbytes 頁數(shù):7 Pages

          UMW

          友臺半導(dǎo)體

          IRF7341

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

          文件:134.99 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341GPBF

          HEXFET? Power MOSFET

          Description These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

          文件:205.3 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7341GTRPbF

          HEXFET? Power MOSFET

          Description These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

          文件:205.3 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7341PBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:158.59 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341Q

          HEXFET Power MOSFET

          Description Specifically designed for Automotive applications, these HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

          文件:156.51 Kbytes 頁數(shù):9 Pages

          IRF

          技術(shù)參數(shù)

          • Minimum Operating Temperature:

            -55°C

          • Maximum Power Dissipation:

            74000mW

          • Maximum Operating Temperature:

            150°C

          • Maximum Gate Source Voltage:

            ±20V

          • Maximum Drain Source Voltage:

            450V

          • Maximum Continuous Drain Current:

            4.9A

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          24+
          TO-220-3
          8866
          詢價
          IR
          05+
          原廠原裝
          1184
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          IR
          2015+
          TO-220AB
          12500
          全新原裝,現(xiàn)貨庫存長期供應(yīng)
          詢價
          ir
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          IR/VISHAY
          20+
          D2-PAK
          36900
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          VISHAY
          25+
          TO-220
          1675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          IR
          23+
          TO220
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          IR/VISHAY
          25+
          D2-PAK
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          Vishay Siliconix
          22+
          TO2203
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          ir
          25+
          500000
          行業(yè)低價,代理渠道
          詢價
          更多IRF734供應(yīng)商 更新時間2026-1-19 16:30:00
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