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          首頁 >IRF7341PBF>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7341PBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:158.59 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341PBF

          Generation V Technology

          文件:163.97 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341PBF_15

          Generation V Technology

          文件:163.97 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7341Q

          HEXFET Power MOSFET

          Description Specifically designed for Automotive applications, these HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 17

          文件:156.51 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7341QPBF

          HEXFET? Power MOSFET

          Description These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

          文件:231.77 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7341QPBF

          Advanced Process Technology

          Description These HEXFET ? Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repe

          文件:218.6 Kbytes 頁數(shù):9 Pages

          IRF

          詳細參數(shù)

          • 型號:

            IRF7341PBF

          • 功能描述:

            MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應商型號品牌批號封裝庫存備注價格
          IR
          25+
          SOP8
          20000
          原裝現(xiàn)貨假一罰十
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          25+
          SOP8
          17
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          Infineon
          24+
          NA
          3474
          進口原裝正品優(yōu)勢供應
          詢價
          IR
          20+
          SO-8
          63258
          原裝優(yōu)勢主營型號-可開原型號增稅票
          詢價
          International Rectifier
          2022+
          569
          全新原裝 貨期兩周
          詢價
          IR
          25+
          SOP8
          30000
          代理全新原裝現(xiàn)貨,價格優(yōu)勢
          詢價
          IR
          24+
          65230
          詢價
          IR
          23+
          SOIC8
          2091
          原裝正品代理渠道價格優(yōu)勢
          詢價
          INFINEON
          25+
          SOP-8
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          更多IRF7341PBF供應商 更新時間2026-1-20 10:10:00
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