| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/irf7342/marking.html">IRF7342；Package：SOP-8；Dual P-Channel MOSFET Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON) 105m (VGS =-10V) Features RDS(ON) 170m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhanced thermal charac 文件：347.05 Kbytes 頁數(shù)：7 Pages | UMW 友臺半導(dǎo)體 | UMW | ||
絲?。?a target="_blank" title="Marking" href="/irf7342/marking.html">IRF7342；Package：SOP-8；Dual P-Channel MOSFET Features Generation V Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V)=-55V RDS(ON) 文件：334.84 Kbytes 頁數(shù)：7 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?a target="_blank" title="Marking" href="/f7342/marking.html">F7342；Package：SOIC8；Dual P-Channel Enhancement Mode MOSFET GENERAL FEATURES * Vos=-60V b =-38A * Roson 文件：3.49337 Mbytes 頁數(shù)：5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：143.7 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Dual N P Channel MOSFET Features. NCh Vos ESsV. Rosion 文件：370.12 Kbytes 頁數(shù)：10 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲印：IRF7343；Package：SOP-8；Dual N P Channel MOSFET Features. NCh Vos ESsV. Rosion 文件：370.12 Kbytes 頁數(shù)：10 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio 文件：2.10487 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
HEXFET Power MOSFET 文件：138.32 Kbytes 頁數(shù)：7 Pages | IRF | IRF | ||
Generation V Technology 文件：163.97 Kbytes 頁數(shù)：7 Pages | IRF | IRF | ||
Generation V Technology 文件：163.97 Kbytes 頁數(shù)：7 Pages | IRF | IRF |
技術(shù)參數(shù)
- Minimum Operating Temperature：
-55°C
- Maximum Power Dissipation：
74000mW
- Maximum Operating Temperature：
150°C
- Maximum Gate Source Voltage：
±20V
- Maximum Drain Source Voltage：
450V
- Maximum Continuous Drain Current：
4.9A
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
8866 |
詢價 | |||
IR |
05+ |
原廠原裝 |
1184 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
IR/VISHAY |
20+ |
D2-PAK |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
VISHAY |
25+ |
TO-220 |
1675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IR |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR/VISHAY |
25+ |
D2-PAK |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ir |
25+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 |
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