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          首頁(yè) >IRF720>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF7205

          HEXFET Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

          文件:166.22 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7205

          HEXFET Power MOSFET

          Features ? Adavanced Process Technology ? Ultra Low On-Resistance ? P-Channel MOSFET ? Surface Mount ? Dynamic dv/dt Rating ? Fast Switching

          文件:65.04 Kbytes 頁(yè)數(shù):2 Pages

          KEXIN

          科信電子

          IRF7205

          P-Channel MOSFET

          Features ? Adavanced Process Technology ? Ultra Low On-Resistance ? P-Channel MOSFET ? Surface Mount ? Dynamic dv/dt Rating ? Fast Switching

          文件:1.92775 Mbytes 頁(yè)數(shù):5 Pages

          KEXIN

          科信電子

          IRF7205PBF

          Adavanced Process Technology

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:278.95 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7205PBF

          HEXFET Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:277.82 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7205TRPBF

          Adavanced Process Technology

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:278.95 Kbytes 頁(yè)數(shù):9 Pages

          IRF

          IRF7207

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

          文件:89.88 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRF7207

          Generation 5 Technology

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

          文件:91.61 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRF7207PBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

          文件:150.26 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          IRF7207TR

          Generation 5 Technology

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

          文件:91.61 Kbytes 頁(yè)數(shù):7 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRF7201TRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            SO8

          • VDS max:

            30 V

          • RDS (on) @10V max:

            30 m?

          • RDS (on) @4.5V max:

            50 m?

          • ID @25°C max:

            7.3 A

          • QG typ @10V:

            19 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INFINEON/英飛凌
          25+
          TO-220
          45000
          INFINEON/英飛凌全新現(xiàn)貨IRF720即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂
          詢價(jià)
          ONSEMI
          25+
          N/A
          21000
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          IR
          2015+
          TO-220
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
          詢價(jià)
          IR
          24+
          TO-220
          5000
          詢價(jià)
          IR
          17+
          TO-220
          6200
          詢價(jià)
          IR
          06+
          TO-220
          8000
          原裝
          詢價(jià)
          IR
          15+
          TO-220
          11560
          全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
          詢價(jià)
          ir
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開(kāi)13%稅票
          詢價(jià)
          IR
          24+
          原廠封裝
          2000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          IR
          16+
          TO-220
          10000
          全新原裝現(xiàn)貨
          詢價(jià)
          更多IRF720供應(yīng)商 更新時(shí)間2026-1-19 17:05:00
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