| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for 文件:166.22 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Features ? Adavanced Process Technology ? Ultra Low On-Resistance ? P-Channel MOSFET ? Surface Mount ? Dynamic dv/dt Rating ? Fast Switching 文件:65.04 Kbytes 頁(yè)數(shù):2 Pages | KEXIN 科信電子 | KEXIN | ||
P-Channel MOSFET Features ? Adavanced Process Technology ? Ultra Low On-Resistance ? P-Channel MOSFET ? Surface Mount ? Dynamic dv/dt Rating ? Fast Switching 文件:1.92775 Mbytes 頁(yè)數(shù):5 Pages | KEXIN 科信電子 | KEXIN | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件:278.95 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件:277.82 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件:278.95 Kbytes 頁(yè)數(shù):9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件:89.88 Kbytes 頁(yè)數(shù):7 Pages | IRF | IRF | ||
Generation 5 Technology Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件:91.61 Kbytes 頁(yè)數(shù):7 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件:150.26 Kbytes 頁(yè)數(shù):7 Pages | IRF | IRF | ||
Generation 5 Technology Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件:91.61 Kbytes 頁(yè)數(shù):7 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN:
IRF7201TRPBF
- Qualification:
Non-Automotive
- Package name:
SO8
- VDS max:
30 V
- RDS (on) @10V max:
30 m?
- RDS (on) @4.5V max:
50 m?
- ID @25°C max:
7.3 A
- QG typ @10V:
19 nC
- Polarity:
N
- VGS(th) min:
1 V
- Technology:
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
25+ |
TO-220 |
45000 |
INFINEON/英飛凌全新現(xiàn)貨IRF720即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂 |
詢價(jià) | ||
ONSEMI |
25+ |
N/A |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
IR |
2015+ |
TO-220 |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IR |
24+ |
TO-220 |
5000 |
詢價(jià) | |||
IR |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
IR |
06+ |
TO-220 |
8000 |
原裝 |
詢價(jià) | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢價(jià) | ||
ir |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) |
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