N-CHANNEL POWER MOSFETS

FEATURES ? Lower RDS(on) ? Improved inductive ruggedness ? Fast switching times ? Rugged polysilicon gate cell structure ? Lower input capacitance ? Extended safe operation area ? Improved high temperature reliability

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SAMSUNG

三星

3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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INTERSIL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.60226 Mbytes 頁(yè)數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. ? Low RDs(on) ? VGS

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FAIRCHILD

仙童半導(dǎo)體

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET? technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

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IRF

isc N-Channel MOSFET Transistor

DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies, UPS,AC and DC motor controls,relay and solenoid drivers. FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements

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ISC

無錫固電

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

N-channel enhancement mode power mos transistors

文件：343.23 Kbytes 頁(yè)數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Power MOSFETs

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ARTSCHIP

SEMICONDUCTORS

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