| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF7205 | HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for 文件：166.22 Kbytes 頁數(shù)：9 Pages | IRF | IRF | |
IRF7205 | HEXFET Power MOSFET Features ? Adavanced Process Technology ? Ultra Low On-Resistance ? P-Channel MOSFET ? Surface Mount ? Dynamic dv/dt Rating ? Fast Switching 文件：65.04 Kbytes 頁數(shù)：2 Pages | KEXIN 科信電子 | KEXIN | |
IRF7205 | P-Channel MOSFET Features ? Adavanced Process Technology ? Ultra Low On-Resistance ? P-Channel MOSFET ? Surface Mount ? Dynamic dv/dt Rating ? Fast Switching 文件：1.92775 Mbytes 頁數(shù)：5 Pages | KEXIN 科信電子 | KEXIN | |
IRF7205 | 采用 SO-8 封裝的 IR MOSFET -30 V \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET; | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：277.82 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：278.95 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：278.95 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
ULTRA LOW ON RESISTANCE 文件：278.95 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
ULTRA LOW ON RESISTANCE 文件：278.95 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Industry-standard pinout SO-8 Package 文件：279.5 Kbytes 頁數(shù)：9 Pages | IRF | IRF |
技術(shù)參數(shù)
- OPN：
IRF7205TRPBF
- Qualification：
Non-Automotive
- Package name：
SO8
- VDS max：
-30 V
- RDS (on) @10V max：
70 m?
- RDS (on) @4.5V max：
130 m?
- ID @25°C max：
-4.6 A
- QG typ @10V：
27 nC
- Polarity：
P
- VGS(th) min：
-1 V
- VGS(th) max：
-3 V
- VGS(th)：
-2 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
SOP-8 |
8000 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
SOP8 |
12000 |
進口原裝 價格優(yōu)勢 |
詢價 | ||
IRF |
24+ |
SOP-8P |
60 |
現(xiàn)貨 |
詢價 | ||
IOR |
23+ |
SOP/8 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
IR |
05+ |
原廠原裝 |
6419 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
25+ |
SOP-8 |
2500 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
99+ |
SOP8 |
2255 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | |||
IR |
24+ |
原廠封裝 |
459 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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