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          首頁 >IRF720>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRF720

          3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

          This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re ? 3.3A, 400V\n? rDS(ON) = 1.800?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”?;

          Renesas

          瑞薩

          IRF720

          Power MOSFET

          ? Dynamic dV/dt rating\n? Repetitive avalanche rated\n? Fast switching;

          Vishay

          威世

          IRF720

          HEXFET Power MOSFET

          Infineon

          英飛凌

          IRF7201

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

          文件:114.26 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201PBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

          文件:173.99 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201TR

          Generation V Technology

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

          文件:119.84 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7204

          Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

          文件:145.18 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7204

          絲?。?a target="_blank" title="Marking" href="/irf7204/marking.html">IRF7204;Package:SOP-8;- 30V P - Channel Enhancement Mode MOSFET

          General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

          文件:1.04499 Mbytes 頁數(shù):7 Pages

          EVVOSEMI

          翊歐

          IRF7204PBF

          HEXFET? Power MOSFET

          Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

          文件:243.67 Kbytes 頁數(shù):9 Pages

          IRF

          IRF7204TR

          絲?。?a target="_blank" title="Marking" href="/irf7204/marking.html">IRF7204;Package:SOP-8;- 30V P - Channel Enhancement Mode MOSFET

          Features: RDS(ON)

          文件:1.52782 Mbytes 頁數(shù):7 Pages

          UMW

          友臺(tái)半導(dǎo)體

          技術(shù)參數(shù)

          • OPN:

            IRF7201TRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            SO8

          • VDS max:

            30 V

          • RDS (on) @10V max:

            30 m?

          • RDS (on) @4.5V max:

            50 m?

          • ID @25°C max:

            7.3 A

          • QG typ @10V:

            19 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INFINEON/英飛凌
          25+
          TO-220
          45000
          INFINEON/英飛凌全新現(xiàn)貨IRF720即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有排單訂
          詢價(jià)
          ONSEMI
          25+
          N/A
          21000
          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          詢價(jià)
          IR
          2015+
          TO-220
          19889
          一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
          詢價(jià)
          IR
          24+
          TO-220
          5000
          詢價(jià)
          IR
          17+
          TO-220
          6200
          詢價(jià)
          IR
          06+
          TO-220
          8000
          原裝
          詢價(jià)
          IR
          15+
          TO-220
          11560
          全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
          詢價(jià)
          ir
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          IR
          24+
          原廠封裝
          2000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          IR
          16+
          TO-220
          10000
          全新原裝現(xiàn)貨
          詢價(jià)
          更多IRF720供應(yīng)商 更新時(shí)間2026-1-19 15:49:00
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