絲?。?strong>IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET

General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

文件：1.04499 Mbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

文件：145.18 Kbytes 頁數(shù)：9 Pages

IRF

絲?。?strong>IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

文件：1.52782 Mbytes 頁數(shù)：7 Pages

UMW

友臺半導體

采用 SO-8 封裝的 -20V 單 P 通道 HEXFET 功率 MOSFET

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內先進的品質\n? 動態(tài)的dv/dt額定值\n? 快速開關\n? 完全雪崩額定值\n? 175°C 的工作溫度\n? P 通道MOSFET;

Infineon

英飛凌

HEXFET? Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：243.67 Kbytes 頁數(shù)：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes 頁數(shù)：9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：249.27 Kbytes 頁數(shù)：9 Pages

IRF

Adavanced Process Technology

文件：249.27 Kbytes 頁數(shù)：9 Pages

IRF

P-Channel 20-V (D-S) MOSFET

文件：2.01837 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體