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          首頁 >IRF7201>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF7201

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

          文件:114.26 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201

          Ultra Low On-Resistance

          文件:644.03 Kbytes 頁數(shù):7 Pages

          KERSEMI

          IRF7201

          采用 SO-8 封裝的 IR MOSFET 30 V

          \n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度;

          Infineon

          英飛凌

          IRF7201PBF

          HEXFET? Power MOSFET

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

          文件:173.99 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201TR

          Generation V Technology

          Description Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

          文件:119.84 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201PBF

          Generation V Technology

          文件:179.34 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201PBF_15

          Generation V Technology

          文件:179.34 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201TRPBF

          Generation V Technology

          文件:179.34 Kbytes 頁數(shù):7 Pages

          IRF

          IRF7201TRPBF.

          Generation V Technology

          文件:179.34 Kbytes 頁數(shù):7 Pages

          IRF

          技術(shù)參數(shù)

          • OPN:

            IRF7201TRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            SO8

          • VDS max:

            30 V

          • RDS (on) @10V max:

            30 m?

          • RDS (on) @4.5V max:

            50 m?

          • ID @25°C max:

            7.3 A

          • QG typ @10V:

            19 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V

          • Technology:

            IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          19+
          SOP
          33262
          詢價
          IR
          2024+
          N/A
          70000
          柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
          詢價
          IR
          23+
          SOP8
          3600
          絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
          詢價
          IRF
          24+
          SOP-8P
          20
          現(xiàn)貨
          詢價
          IR
          05+
          原廠原裝
          4666
          只做全新原裝真實現(xiàn)貨供應(yīng)
          詢價
          IR
          25+
          SOP-8
          3000
          福安甌為您提供真芯庫存,真誠服務(wù)
          詢價
          IR
          13+
          SOP-8
          27838
          原裝分銷
          詢價
          IR
          23+
          34-PCM
          5000
          原裝正品,假一罰十
          詢價
          IR
          24+
          SOP8P
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          IR
          24+
          原廠封裝
          5886
          原裝現(xiàn)貨假一罰十
          詢價
          更多IRF7201供應(yīng)商 更新時間2026-1-20 10:21:00
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