Advanced Power MOSFET (400V, 3.6ohm, 2A)

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 10μA (Max.) @ VDS = 400V ? Low RDS(ON): 2.815? (Typ.)

文件：226.65 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

? DESCRITION ? designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. ? FEATU

文件：46.38 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET (400V, 3.6ohm, 2A)

ONSEMI

安森美半導(dǎo)體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：859.15 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

HEXFET? Power MOSFET

文件：225.67 Kbytes 頁數(shù)：7 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：1.01954 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司