| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>IRF7105;Package:SOP-8;Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件:452.89 Kbytes 頁(yè)數(shù):9 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?strong>IRF7105;Package:SOP-8;Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件:452.89 Kbytes 頁(yè)數(shù):9 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
IRF7105 | Dual N P Channel MOSFET Features N-Ch: VDS (V)=25V RDS(ON) 文件:452.89 Kbytes 頁(yè)數(shù):9 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
IRF7105 | EVALUATION KIT INTRODUCING LX1710/1711 AUDIOMAX Thank you for your interest in the latest generation of AudioMAX products. The enclosed LXE1710 evaluation board is a fully functional mono amplifier designed to demonstrate the “new and improved” Switching Class-D Power Amplifier IC from Linfinity Microsemi. The 文件:339.7 Kbytes 頁(yè)數(shù):18 Pages | MICROSEMI 美高森美 | MICROSEMI | |
IRF7105 | HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:271.1 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | |
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:302.21 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:307.9 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
HEXFET Power MOSFET DESCRIPTION These HEXFET?Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetiti 文件:319.49 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:307.9 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件:307.9 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRF7105
- 功能描述:
MOSFET MOSFT DUAL N/PCh 25V 3.5A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
SOP8 |
9080 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
IR |
24+ |
SOP8 |
8000 |
只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2013+ |
SOP8 |
16800 |
授權(quán)分銷IR系列,公司現(xiàn)貨庫(kù)存供應(yīng) IRF7105TR,正品原裝,品質(zhì)保證。 |
詢價(jià) | ||
IOR |
23+ |
SO-8 |
7000 |
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)! |
詢價(jià) | ||
IR |
2015+ |
SOP/DIP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IOR |
24+ |
SOP8 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢價(jià) | ||
IR |
23+ |
34-PCM |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
4156 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
24+ |
12 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
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