| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF614 | 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such 文件:45.1 Kbytes 頁數(shù):7 Pages | INTERSIL | INTERSIL | |
IRF614 | Ease of Paralleling DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati 文件:282.55 Kbytes 頁數(shù):9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF614 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件:158.54 Kbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF614 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=2.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:296.14 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
IRF614 | 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET | Renesas 瑞薩 | Renesas | |
IRF614 | Power MOSFET | Vishay 威世 | Vishay | |
Power MOSFET FEATURES ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH 文件:158.54 Kbytes 頁數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel Mosfet Transistor ? DESCRITION ? Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. ? FEATURES ? Low RDS(on) ? VGS Rated at ±30V ? Silicon Gate for Fast Switching Speed ? Rugged ? Low Drive Requirements 文件:200.66 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | ||
250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件:855.44 Kbytes 頁數(shù):10 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
hexfet power mosfet HEXFET Power MOSFET ? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Fast Switching ? Surface Mount ? Ease of Paralleling ? Simple Drive Requirements ? Lead-Free 文件:924.75 Kbytes 頁數(shù):7 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號(hào):
IRF614
- 功能描述:
MOSFET N-Chan 250V 2.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
仙童 |
06+ |
TO-220 |
5000 |
原裝 |
詢價(jià) | ||
IR |
2016+ |
TO220 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
IR |
25+ |
TO |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
1450 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
15+ |
TO-220 |
11560 |
全新原裝,現(xiàn)貨庫存,長期供應(yīng) |
詢價(jià) | ||
IR |
24+/25+ |
445 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
詢價(jià) | |||
IR |
23+ |
TO |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IOR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
9888 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR |
20+ |
TO-220 |
38900 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫存
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