Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω(Typ.)

文件：253.8 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 1.25Ω(TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

文件：68.49 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features ? 3.3A, 200V, RDS(on)= 1.5?@VGS= 10 V ? Low gate charge ( typical 7.2 nC) ? Low Crss ( typical 6.8 pF) ? Fast switch

文件：866.99 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

Surface mount

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

文件：182.71 Kbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES ? Surface mount ? Available in tape and reel ? Dynamic dV/dt rating ? Repetitive avalanche rated ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note? * This datashee

文件：248.98 Kbytes 頁數(shù)：10 Pages

VISHAYVishay Siliconix

威世威世科技公司