Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 0.626 Ω(Typ.)

文件：259.43 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Low RDS(on) = 0.626W(TYP) ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Rugged Gate Oxide Technology

文件：70.07 Kbytes 頁數(shù)：2 Pages

ISC

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Advanced Power MOSFET

ONSEMI

安森美半導(dǎo)體

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

文件：875.31 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.55 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS

文件：184.68 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

文件：43.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電