| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF621 | N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V 文件：165.53 Kbytes 頁數(shù)：5 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
IRF621 | isc N-Channel MOSFET Transistor 文件：45.07 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
IRF621 | N-Channel Power Mosfets 文件：154.1 Kbytes 頁數(shù)：5 Pages | ARTSCHIP | ARTSCHIP | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：125.4 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：178.06 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A ) Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件：997.19 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：174.05 Kbytes 頁數(shù)：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：178.06 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A ) Coming Soon. If you have some information on related parts, please share useful information by adding links below. 文件：997.19 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
P-Ch 150V Fast Switching MOSFETs Description ?Advanced TrenchMOSTechnology ?100 EAS Guaranteed ?Green Device Available Applications ?Load Switch. ?Power Management. ?LED Backlighting. ?Networking application. 文件：687.5 Kbytes 頁數(shù)：4 Pages | EVVOSEMI 翊歐 | EVVOSEMI |
技術參數(shù)
- Package?：
TO-220
- VDS?max：
-150.0V
- RDS (on)(@10V)?max：
290.0m?
- RDS (on)?max：
290.0m?
- Polarity?：
P
- ID (@ TC=25°C)?max：
-13.0A
- ID (@ TC=100°C)?max：
-9.0A
- ID ?max：
-9.0A
- Ptot?max：
110.0W
- QG?：
44.0nC?
- RthJC?max：
1.4K/W
- Mounting?：
THT
- Qgd?：
23.3nC?
- Tj?max：
175.0°C
- VGS?max：
20.0V
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-220-3 |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
MOT |
05+ |
原廠原裝 |
5781 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
ST |
新 |
126 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
22+ |
TO-220 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 | |||
TI |
25+ |
TO-220-3 |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
24+/25+ |
2150 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
IR |
14+ |
SOP8 |
2200 |
原裝現(xiàn)貨價格有優(yōu)勢量大可以發(fā)貨 |
詢價 | ||
IR |
23+ |
SOP8 |
3200 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 |
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