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                >IRF611>規(guī)格書列表
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    IRF611
    N-Channel Power MOSFETs, 3.5A, 150-200V
    
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
● LOW RDS(on)
● VQS Rated at ± 20 V
● Silicon G
    文件：148.52 Kbytes 頁數(shù)：5 Pages
    FAIRCHILD
    仙童半導(dǎo)體
    

    IRF611
    N-Channel Power MOSFETs 3.5 A, 150-200 V
    
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
● LOW RDS(on)
● VQS Rated at ± 20 V
● Silicon G
    文件：113.15 Kbytes 頁數(shù)：3 Pages
    NJSEMINew Jersey Semi-Conductor Products, Inc.
    新澤西半導(dǎo)體新澤西半導(dǎo)體公司
    

    IRF611
    N-Channel Power MOSFETs 3.5 A, 150-200 V
    
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
● LOW RDS(on)
● VQS Rated at ± 20 V
● Silicon G
    文件：113.15 Kbytes 頁數(shù)：3 Pages
    NJSEMINew Jersey Semi-Conductor Products, Inc.
    新澤西半導(dǎo)體新澤西半導(dǎo)體公司
    

    IRF611
    N-Channel Power Mosfets
    文件：344.15 Kbytes 頁數(shù)：5 Pages
    ARTSCHIP
    

    IRF611
    SEMICONDUCTORS
    文件：2.43533 Mbytes 頁數(shù)：31 Pages
    ETCList of Unclassifed Manufacturers
    未分類制造商
    

    IRF611
    isc N-Channel MOSFET Transistor
    文件：45.1 Kbytes 頁數(shù)：2 Pages
    ISC
    無錫固電
    

    IRF611
    N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A.
    GESS
    

    IRF611
    Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB
    NJS
    NJS
    

    IRF611-N
    N-Channel Power MOSFETs, 3.5A, 150-200V
    
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.
● LOW RDS(on)
● VQS Rated at ± 20 V
● Silicon G
    文件：148.52 Kbytes 頁數(shù)：5 Pages
    FAIRCHILD
    仙童半導(dǎo)體
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Minimum Operating Temperature：
      -55°C
    • Maximum Power Dissipation：
      20000mW
    • Maximum Operating Temperature：
      150°C
    • Maximum Gate Source Voltage：
      ±20V
    • Maximum Drain Source Voltage：
      150V
    • Maximum Continuous Drain Current：
      2.5A
    • Material：
      Si
    • Configuration：
      Single
    • Channel Type：
      N
    • Channel Mode：
      Enhancement
    • Category：
      Power MOSFET
    
            
    
        
    
            
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    更多IRF611供應(yīng)商
            更新時(shí)間2026-1-22 9:16:00
        
    
        
    
          
    
            
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