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          首頁 >IRF130>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRF130-133

          N-Channel Power MOSFETs, 20 A, 60-100 V

          Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

          文件:180.59 Kbytes 頁數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          IRF1302

          Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A??

          Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

          文件:523.539 Kbytes 頁數(shù):9 Pages

          IRF

          IRF1302L

          Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

          Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

          文件:229.09 Kbytes 頁數(shù):11 Pages

          IRF

          IRF1302S

          Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

          Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

          文件:229.09 Kbytes 頁數(shù):11 Pages

          IRF

          IRF1302PBF

          AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A )

          文件:165.37 Kbytes 頁數(shù):10 Pages

          IRF

          IRF130SMD

          N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

          文件:22.69 Kbytes 頁數(shù):2 Pages

          SEME-LAB

          IRF130SMD05N

          N??HANNEL POWER MOSFET FOR HI??EL APPLICATIONS

          文件:29.81 Kbytes 頁數(shù):2 Pages

          SEME-LAB

          IRF1302L

          AUTOMOTIVE MOSFET

          Description\nSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast sw

          Infineon

          英飛凌

          詳細(xì)參數(shù)

          • 型號:

            IRF130

          • 制造商:

            International Rectifier

          • 功能描述:

            Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3

          • 功能描述:

            TRANS MOSFET N-CH 100V 14A 2PIN TO-204AA - Bulk

          • 功能描述:

            N CH MOSFET 100V 14A TO-204AA

          • 功能描述:

            N CH MOSFET, 100V, 14A, TO-204AA

          • 功能描述:

            N CH MOSFET, 100V, 14A, TO-204AA; Transistor

          • Polarity:

            N Channel; Continuous Drain Current

          • Id:

            14A; Drain Source Voltage

          • Vds:

            100V; On Resistance

          • Rds(on):

            180mohm; Rds(on) Test Voltage

          • Vgs:

            10V; Threshold Voltage Vgs

          • Typ:

            4V; No. of

          • Pins:

            2;RoHS

          • Compliant:

            No

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          更多IRF130供應(yīng)商 更新時(shí)間2026-1-21 15:01:00
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