AUTOMOTIVE MOSFET ( VDSS = 20V , RDS(on) = 4.0m廓 , ID = 180A )

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IRF

Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A??

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast

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IRF

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 100A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 49mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：454.67 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

文件：138.98 Kbytes 頁(yè)數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

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200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

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VMI

Drywall Punch

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