集成快速體二極管的 650V CoolMOS ? CFD7 超結(jié) MOSFET 是諧振高功率拓?fù)涞耐昝肋x擇

\n優(yōu)勢(shì):\n? 出色的硬換向穩(wěn)健性\n? 總線電壓提高，為設(shè)計(jì)提供額外安全裕度\n? 可實(shí)現(xiàn)更高的功率密度\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中實(shí)現(xiàn)卓越輕載效率\n? 可在工業(yè)開關(guān)電源 (SMPS) 應(yīng)用中提高滿載效率\n? 相較于市面上的替代產(chǎn)品，價(jià)格更具競爭力;

Infineon

英飛凌

絲?。?a target="_blank" title="Marking" href="/65r125f7/marking.html">65R125F7；Package：PG-TO263-3；650V CoolMOS? CFD7 SJ Power Device

文件：1.27622 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe

文件：1.33147 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

文件：1.49703 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

文件：1.52275 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌