650V CoolMOS C6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 頁(yè)數(shù)：19 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/65c6190/marking.html">65C6190；Package：PG-TO263；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 頁(yè)數(shù)：19 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：189.26 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進(jìn)的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗(yàn)與其先進(jìn)的創(chuàng)新技術(shù)C6 器件具備了快速開關(guān)超結(jié) MOSFET 的所有優(yōu)點(diǎn)，同時(shí)又不犧牲易用性。很低的開關(guān)和通態(tài)損耗使開關(guān)應(yīng)用更高效，結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3 ? 易于控制開關(guān)行為\n? 非常高的換流堅(jiān)固性\n? 與 C3 相比，具有更高的輕載效率\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比，性價(jià)比更高\(yùn)n? 提升功率密度\n? 通用部件可在軟、硬開關(guān)拓?fù)渲惺褂肻n? 提高在硬開關(guān)應(yīng)用中的效率\n? 減輕可能因?yàn)?PCB 布局和封裝寄生效應(yīng)而引發(fā)的振蕩\n?;

Infineon

英飛凌