絲?。?a target="_blank" title="Marking" href="/65c6600/marking.html">65C6600；Package：PG-TO263；650V CoolMOS C6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

文件：2.09837 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：189.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

500V-900V CoolMOS? N-Channel Power MOSFET

CoolMOS? C6 結(jié)合了英飛凌作為業(yè)內(nèi)先進(jìn)的超結(jié)MOSFET供應(yīng)商的相關(guān)經(jīng)驗與其先進(jìn)的創(chuàng)新技術(shù)C6 器件具備了快速開關(guān)超結(jié) MOSFET 的所有優(yōu)點，同時又不犧牲易用性。很低的開關(guān)和通態(tài)損耗使開關(guān)應(yīng)用更高效，結(jié)構(gòu)緊湊、重量更輕、溫度更低。\n ? 600V CoolMOS? C6 可替代 600V CoolMOS? C3\n? 650V CoolMOS? C6 可替代 650V CoolMOS? C3 ? 易于控制開關(guān)行為\n? 由于非常低的品質(zhì)因數(shù)（R DS(ON)*Q g）和E oss），因此損耗極低\n? 非常高的換流堅固性\n? 使用簡便\n? 與 C3 相比，具有更高的輕載效率\n? 出色的可靠性和經(jīng)過實踐驗證的 CoolMOS? 質(zhì)量以及高密度二極管耐用性\n? 與以前的 CoolMOS? 幾代產(chǎn)品相比，性價比更高\n? 更高效、更緊湊、重量更輕、溫度更低\n\n\n優(yōu)勢:\n?\n ? 提升功率密度\n? 提升可靠性\n? 通用部件可在軟、硬開關(guān)拓?fù)渲惺褂肻n? 提高輕載效率\n? 提高在硬開關(guān)應(yīng)用中的效率\n? 改進(jìn)了易用性\n? 減輕可能因為 PCB 布局和封裝寄生效應(yīng)而引;

Infineon

英飛凌

650V CoolMOS C6 Power Transistor

Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features ? Extremely low losses due to very low FOM Rdson^Qg and Eoss ? Very high commutation ruggedness ? Easy to

文件：2.09837 Mbytes 頁數(shù)：19 Pages

INFINEON

英飛凌

Material Content Data Sheet

文件：33.26 Kbytes 頁數(shù)：1 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Fast switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.6? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.25 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電