絲?。?a target="_blank" title="Marking" href="/65a125f7/marking.html">65A125F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

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650 V CoolMOS ? CFD7A N 通道汽車 SJ 功率 MOSFET，采用 HDSOP-22 頂部冷卻

\n優(yōu)勢:\n? Better utilization of PCB space\n? Highest reliability for automotive appl.\n? Optimized power loop\n? Decoupling of thermals from substrate\n? Enabling of higher power density designs\n? Scalable for use in PFC and DC-DC stage\n? Granular portfolio available;

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英飛凌

MOSFET 650V CoolMOSa CFD7A SJ Power Device

Features ? Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr ? Lowest FOM RDS(on)*Qg and RDS(on)*Eoss ? 100% avalanche tested ? Best-in-class RDS(on) in SMD and THD packages Benefits ? Lower switching losses enabling high

文件：1.52275 Mbytes 頁數(shù)：14 Pages

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650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe

文件：1.50643 Mbytes 頁數(shù)：14 Pages

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650V CoolMOSa CFD7 SJ Power Device

Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature

文件：1.38498 Mbytes 頁數(shù)：14 Pages

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