首頁 >IPB65R660CFDA>規(guī)格書列表
| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IPB65R660CFDA | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件:2.34202 Mbytes 頁數(shù):15 Pages | INFINEON 英飛凌 | INFINEON | |
IPB65R660CFDA | 20V-650V汽車級MOSFET 650V CoolMOS? CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS? power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS? CFDA series provide ? First 650V automotive qualified technology with integrated fast body diode on the market\n? Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n? Low gate charge value Q g\n? Low Q rr at repetitive commutation on body diode & low Q oss\n? Reduced turn on and turn of ; | Infineon 英飛凌 | Infineon | |
650V CoolMOS CFD Power Transistor Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件:3.9515 Mbytes 頁數(shù):20 Pages | INFINEON 英飛凌 | INFINEON | ||
Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS? is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS? CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu 文件:4.46997 Mbytes 頁數(shù):21 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel MOSFET Transistor ? DESCRITION ? High commutation ruggedness ? FEATURES ? Static drain-source on-resistance: RDS(on)≤0.66? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件:335.3 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- OPN:
IPB65R660CFDAATMA1
- Qualification:
Automotive
- Package name:
PG-TO263-3
- VDS max:
650 V
- RDS (on) @10V max:
660 m?
- ID @25°C max:
6 A
- QG typ @10V:
20 nC
- Special Features:
automotive
- Polarity:
N
- VGS(th) min:
3.5 V
- VGS(th) max:
4.5 V
- Technology:
CoolMOS? CFDA
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
21+ |
TO263 |
1000 |
15年光格 只做原裝正品 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INFINE0N |
21+ |
D2PAK (TO-263) |
32568 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營 |
詢價 | ||
Infineon(英飛凌) |
2447 |
PG-TO263-3 |
115000 |
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
Infineon(英飛凌) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
PG-TO263-3 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Infineon/英飛凌 |
2021+ |
PG-TO263-3 |
9600 |
原裝現(xiàn)貨,歡迎詢價 |
詢價 | ||
Infineon/英飛凌 |
24+ |
PG-TO263-3 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
24+ |
PG-TO263-3 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO263-3 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 |
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